Stack Gate Technique for Dopingless Bulk FinFETs

@article{Liao2014StackGT,
  title={Stack Gate Technique for Dopingless Bulk FinFETs},
  author={Yi-Bo Liao and Meng-Hsueh Chiang and Yu-Sheng Lai and Wei-Chou Hsu},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={963-968}
}
FinFETs have been made successfully for mass manufacturing on bulk and silicon-on-insulator wafers. When choosing the bulk option, additional process steps are needed for substrate leakage suppression. Typically, heavy substrate doping for punchthrough stopping between the source and drain is used, but precise control of the doping profile to prevent its up-diffusion into the channel has been a challenging task, especially for continuously shrinking device dimension. In this paper, we propose a… CONTINUE READING

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