Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

@article{Neudeck2008StableEO,
  title={Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 \$^\{\circ\}\hbox\{C\}\$},
  author={P. Neudeck and D. J. Spry and Liang-Yu Chen and G. M. Beheim and R S Okojie and C. Chang and R. D. Meredith and T. L. Ferrier and L. Evans and M. Krasowski and N. F. Prokop},
  journal={IEEE Electron Device Letters},
  year={2008},
  volume={29},
  pages={456-459}
}
The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500degC in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high-temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the… CONTINUE READING
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Fabrication and testing of 6H–SiC JFETs for prolonged 500 ◦C operation in air ambient

  • D. J. Spry, P. G. Neudeck, +6 authors L. J. Evans
  • Materials Science Forum, Silicon Carbide and…
  • 2007
2 Excerpts

SiC field effect transistor technology demonstrating prolonged stable operation at 500 ◦C

  • P. G. Neudeck, D. J. Spry, +4 authors T. Ferrier
  • Materials Science Forum, vol. 556-557, N. Wright…
  • 2007
2 Excerpts

Demonstration of 500 ◦C AC amplifier based on SiC MESFET and ceramic packaging

  • L. Y. Chen, D. J. Spry, P. G. Neudeck
  • Proc. IMAPS Int. High Temperature Electron. Conf…
  • 2006
2 Excerpts

GaN-based devices for very high temperature applications

  • A. M. Dabiran, A. Osinsky, +10 authors S. J. Pearton
  • Proc. IMAPS Int. High Temperature Electron. Conf…
  • 2006
1 Excerpt

Electrical operation of 6H–SiC MESFET at 500 ◦C for 500 hours in air ambient

  • D. Spry, P. Neudeck, +5 authors T. Ferrier
  • Proc. IMAPS Int. High Temperature Electron. Conf…
  • 2004
1 Excerpt

High-temperature electronics—A role for wide bandgap semiconductors

  • P. G. Neudeck, R. S. Okojie, L.-Y. Chen
  • Proc. IEEE, vol. 90, no. 6, pp. 1065–1076, Jun…
  • 2002
2 Excerpts

Reliability assessment of Ti/TaSi2/Pt ohmic contacts on SiC after 1000 h at 600 ◦C

  • R. S. Okojie, D. Lukco, Y. L. Chen, D. J. Spry
  • J. Appl. Phys., vol. 91, no. 10, pp. 6553–6559…
  • 2002
2 Excerpts

600 ◦C logic gates using silicon carbide JFETs

  • P. G. Neudeck, G. M. Beheim, C. S. Salupo
  • Proc. Government Microcircuit Appl. Conf…
  • 2000

6H–SiC field effect transistor for high temperature applications

  • K. Dohnke, R. Rupp, D. Peters, J. Volkl, D. Stephani
  • Inst. Phys. Conf. Series, no. 137, Silicon…
  • 1994

Silicon carbide buried-gate junction field effect transistors for high-temperature power electronic applications

  • P. G. Neudeck, J. B. Petit, C. S. Salupo
  • Proc. 2nd Int. High Temperature Electron. Conf…
  • 1994
1 Excerpt

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