Stability of topological properties of bismuth (1 1 1) bilayer

  title={Stability of topological properties of bismuth (1 1 1) bilayer},
  author={Maciej Bieniek and Tomasz Woźniak and Paweł Potasz},
  journal={Journal of Physics: Condensed Matter},
We investigate the electronic and transport properties of the bismuth (1 1 1) bilayer in the context of the stability of its topological properties against different perturbations. The effects of spin–orbit coupling variations, geometry relaxation and interaction with a substrate are considered. The transport properties are studied in the presence of Anderson disorder. Band structure calculations are performed within the multi-orbital tight-binding model and density functional theory methods. A… 

Entanglement entropy and entanglement spectrum of Bi1−xSbx (1 1 1) bilayers

The topologically non-trivial nature of the bismuth bilayer is proved by the presence of spectral flow in the entanglement spectrum, which shows a finite discontinuity in the first derivative.

Possible superconductivity in Bismuth (111) bilayers. Their electronic and vibrational properties from first principles

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Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments

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It is illustrated that a Bismuth monolayer nanoribbon structure can operate at high thermoelectric efficiency and also at a considerable power generation rate.

Stable halogen 2D materials: the case of iodine and astatine

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Toward Planar Iodine 2D Crystal Materials

A spd2 hybridization rule is shown, accommodating all of the outermost electrons of halogen elements, and the appearance of Dirac points suggests that the transformation of a normalSemimetal into a Dirac semimetal occurs.

Advances of 2D bismuth in energy sciences.

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Study of Spin-Orbit Coupling Effect on Bismuth (111) Bilayer

Band inversion process in Bi(111) bilayer is studied using many-orbital tight-binding model, supported by the density-functional theory calculations, with a controllable spin–orbit coupling constant

First-principles investigation of structural and electronic properties of ultrathin Bi films

Employing first-principles calculations, we perform a systematic study of the electronic properties of thin (one to six bilayers) films of the semimetal bismuth in (111) and (110) orientation. Due to

Tuning topological edge states of Bi(111) bilayer film by edge adsorption.

The topological edge states of zigzag Bi(111) nanoribbon can be significantly tuned by H edge adsorption, and the spin texture of the Dirac states is modified, which is described by introducing an effective Hamiltonian.

Two-dimensional inversion-asymmetric topological insulators in functionalized III-Bi bilayers

The search for inversion-asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so far only a few IATIs have been discovered and there is no

Spin rectification by orbital polarization in Bi-bilayer nanoribbons.

It is demonstrated that curved BNRs can be used as the spin valves to rectify the electric currents via the edge states, providing a practical way of utilizing two-dimensional topological insulator Bi bilayers for spintronic devices.

Topological properties determined by atomic buckling in self-assembled ultrathin Bi(110).

N nontrivial 2D TI phases in 2-monolayer (2-ML) and 4-ML Bi(110) films with large and tunable bandgaps determined by atomic buckling of Bi( 110) films are reported.

Edge state modulation of bilayer Bi nanoribbons by atom adsorption.

It is found that for a clean Bi zigzag ribbon the penetration depth of well-localized edge states is a function of the momentum-space width of the edge-state dispersion, which suggests that ZBNR could be a possible candidate for nanoelectronic devices under some special conditions.

Topological states modulation of Bi and Sb thin films by atomic adsorption.

Topological surface states of Bi and Sb thin films of 1-5 bilayers in (111) orientation without and with H(F) adsorption are investigated to find a huge band gap advantageous to observe the quantum spin Hall effect and the quantum phase transition from trivial to non-trivial phase is induced.

Electronic structure of the semimetals Bi and Sb.

  • LiuAllen
  • Physics, Materials Science
    Physical review. B, Condensed matter
  • 1995
A third-neighbor tight-binding model, with spin-orbit coupling included, is developed, to treat the electronic properties of Bi and Sb quantitatively and should be useful for calculations of the electronic property of proposed semimetal-semiconductor systems, including superlattices and resonant-tunneling devices.