Stability conditioning to enhance read stability 10x in 50nm Al<inf>x</inf>O<inf>y</inf> ReRAM

Abstract

This study focuses on read stability after reset in 50nm Al<sub>x</sub>O<sub>y</sub> ReRAM. Unstable behaviors are characterized and a 2-part solution to reduce instability from 64 to 6% and read error from 8 to 0.2% is proposed. After conventional reset including verify, (i) a block-level low voltage sealing operation is followed by (ii) a stability check… (More)

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Cite this paper

@article{Iwasaki2013StabilityCT, title={Stability conditioning to enhance read stability 10x in 50nm AlxOy ReRAM}, author={Tomoko Ogura Iwasaki and Sheyang Ning and Ken Takeuchi}, journal={2013 5th IEEE International Memory Workshop}, year={2013}, pages={44-47} }