Stability and molecular pathways to the formation of spin defects in silicon carbide

@article{Lee2021StabilityAM,
  title={Stability and molecular pathways to the formation of spin defects in silicon carbide},
  author={Elizabeth M Y Lee and Alvin Yu and Juan J. de Pablo and Giulia Galli},
  journal={Nature Communications},
  year={2021},
  volume={12}
}
  • Elizabeth M Y Lee, Alvin Yu, +1 author G. Galli
  • Published 14 September 2021
  • Medicine, Physics
  • Nature Communications
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate—the divacancy complex (VV) in silicon carbide (SiC). Using atomistic models, enhanced sampling simulations, and density functional… Expand

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References

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