Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor

@article{Jain2014StabilityCD,
  title={Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor},
  author={Ankit Jain and Muhammad Ashraful Alam},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={2235-2242}
}
The current-voltage characteristics of a classical field-effect transistor (FET) is dictated by thermal injection of charge carriers over a gate-controlled energy barrier. It is well known that the subthreshold swing (S) associated with these transistors cannot be reduced below the Boltzmann limit of 60 mV/decade, which in turn defines the lower limit of power dissipation. Therefore, a number of groups have recently proposed to use negative capacitance (NC) gate insulators in FETs to reduce S… CONTINUE READING
Highly Cited
This paper has 26 citations. REVIEW CITATIONS

6 Figures & Tables

Topics

Statistics

051015201620172018
Citations per Year

Citation Velocity: 8

Averaging 8 citations per year over the last 3 years.

Learn more about how we calculate this metric in our FAQ.