Sram

  • Jinyong Chung
  • Published 2006 in
    2006 IEEE International Solid State Circuits…

Abstract

Achieving these requirements is made more difficult as process technology scales down to smaller dimensions. Subthreshold leakage currents, gate-oxide tunneling currents, and statistical variations in transistor characteristics make the design of 6T SRAM cells increasingly difficult and solutions tend to increase the memory cell size. Thus, there is a need… (More)

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