Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

@article{Kaajakari2004SquareextensionalMS,
  title={Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications},
  author={Ville Kaajakari and Tomi Mattila and Alexander Oja and J. Kiihamaki and H.. Seppa},
  journal={IEEE Electron Device Letters},
  year={2004},
  volume={25},
  pages={173-175}
}
A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulator wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz offset from the carrier. 

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