Sputtered Ti-Cu as a superior barrier and seed layer for panel-based high-density RDL wiring structures

@article{Nair2015SputteredTA,
  title={Sputtered Ti-Cu as a superior barrier and seed layer for panel-based high-density RDL wiring structures},
  author={Chandrasekharan Nair and Fabio Pieralisi and Fuhan Liu and Venky Sundaram and Uwe Muehlfeld and Markus Hanika and Sesh Ramaswami and Rao R. Tummala},
  journal={2015 IEEE 65th Electronic Components and Technology Conference (ECTC)},
  year={2015},
  pages={2248-2253}
}
This paper demonstrates that sputtered Ti-Cu is a superior barrier and seed layer on glass and organic panel substrates, over traditional electroless seeding, for the fabrication of ultra-fine copper traces (2-5μm) on dry film polymer dielectrics for high-density 2.5D interposers. The current semi-additive processes using electroless Cu seed face several… CONTINUE READING