Split-Gate-Enhanced UMOSFET With an Optimized Layout of Trench Surrounding Mesa

@article{Wang2012SplitGateEnhancedUW,
  title={Split-Gate-Enhanced UMOSFET With an Optimized Layout of Trench Surrounding Mesa},
  author={Ying Wang and Hai-fan Hu and Wen-li Jiao},
  journal={IEEE Transactions on Electron Devices},
  year={2012},
  volume={59},
  pages={3037-3041}
}
An optimized split-gate-enhanced UMOSFET (SGE-UMOS) layout design is proposed, and its mechanism is investigated by 2-D and 3-D simulations. The layout features trench surrounding mesa (TSM): First, it optimizes the distribution of electric field density in the outer active mesa, reduces the electric-field crowding effect, and improves the breakdown voltage of the SGE-UMOS device. Second, it is unnecessary to design the layout corner with a large diameter in the termination region for the TSM… CONTINUE READING