Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

@article{Pirro2015SplitCapacitanceAC,
  title={Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration},
  author={Luca Pirro and Amer Diab and Irina Ionica and G{\'e}rard Ghibaudo and L. Faraone and Sorin Cristoloveanu},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={2717-2723}
}
Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present… CONTINUE READING
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