Spintronics based random access memory: a review

@inproceedings{Bhatti2017SpintronicsBR,
  title={Spintronics based random access memory: a review},
  author={Sabpreet Bhatti and Rachid Sbiaa and Atsufumi Hirohata and Hideo Ohno and Shunsuke Fukami and S. N. Piramanayagam},
  year={2017}
}
This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale in 2006, the MRAM has grown to a 256 Mb product of Everspin in 2016. During this period, MRAM has overcome several hurdles and have reached a stage, where the potential for MRAM is very promising. One of the main hurdles that the MRAM overcome between 2006 and 2016 is the way the information is written. The 4 Mb MRAM used a… CONTINUE READING

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