Spintronics - A retrospective and perspective
@article{Wolf2006SpintronicsA, title={Spintronics - A retrospective and perspective}, author={Stuart A. Wolf and Almadena Yu. Chtchelkanova and Daryl M. Treger}, journal={IBM J. Res. Dev.}, year={2006}, volume={50}, pages={101-110} }
Spintronics is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. Conventional electronics are based on the charge of the electron. Attempts to use the other fundamental property of an electron, its spin, have given rise to a new, rapidly evolving field, known as spintronics, an acronym for spin transport electronics that was first introduced in 1996 to…
191 Citations
Spin Dynamics of n-doped Gallium Arsenide
- Physics
- 2014
The emerging technology of spintronics promises to revolutionise computing by allowing considerably more energy
efficient computing than is currently possible. Gallium Arsenide is one candidate…
Spin transport and spin-charge interconversion phenomena in Ge-based structures
- PhysicsNanoScience + Engineering
- 2019
The aim of semiconductor spintronics is to exploit the spin degree of freedom of electrons to add new functionalities to electronic devices and boost their performances. The development of assets…
Local light-induced magnetization using nanodots and chiral molecules.
- PhysicsNano letters
- 2014
This work achieves local spin-based magnetization generated optically at ambient temperatures using chiral molecules and nanocrystals, to lead to optically controlled spintronics logic devices that will enable low power consumption, high density, and cheap fabrication.
Recent advances in spintronics for emerging memory devices
- Physics
- 2008
The emerging field of spintronics has the potential to bring game-changing opportunities to nanoelectronic technologies far beyond its traditional contribution to mass storage applications such as…
Designing organic spin filters in the coherent tunneling regime.
- Physics, ChemistryThe Journal of chemical physics
- 2011
The results suggest that the delocalization of the singly occupied molecular orbital and of the spin density onto the benzene ring connected to the electrodes, is a good, although not the sole indicator of spin filtering functionality.
Spin-dependent transport phenomena in organic semiconductors
- Physics
- 2007
Thin-film organic semiconductors transport can have an anomalously high sensitivity to low magnetic fields. Such a response is unexpected considering that thermal fluctuation energies are greater…
Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years
- Physics
- 2011
In this article we briefly review the current state of the experimental research on spin polarized transport in organic semiconductors. These systems, which include small molecular weight compounds…
A high-spin organic diradical as a spin filter.
- PhysicsPhysical chemistry chemical physics : PCCP
- 2015
A state-of-the-art non-equilibrium Green function's (NEGF) method coupled with the density functional theory (DFT) method was carried out on this two-probe molecular bridge system to understand its electrical spin transport characteristics.
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
- PhysicsIBM J. Res. Dev.
- 2006
This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile…
Spin-Transfer-Torque driven magneto-logic OR, AND and NOT gates
- Physics
- 2013
We show that current induced magneto-logic gates like AND, OR and NOT can be designed with the simple architecture involving a single nano spin-valve pillar, as an extension of our recent work on…
References
SHOWING 1-10 OF 94 REFERENCES
Electrical spin injection in a ferromagnetic semiconductor heterostructure
- PhysicsNature
- 1999
Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of ‘spintronics’, wherein the classical manipulation of electronic spin in…
Injection and detection of a spin-polarized current in a light-emitting diode
- PhysicsNature
- 1999
The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin—such as giant-magnetoresistive sensors and magnetoresistive…
Spintronics: a new paradigm for electronics for the new millennium
- Physics
- 2000
SPIN TRansport electrONICS or SPINTRONICS, in which the spin degree of freedom of the electron will play an important role in addition to or in place of the charge degree of freedom in mainstream…
A resonant spin lifetime transistor
- Physics
- 2003
We present a device concept for a spintronic transistor based on the spin relaxation properties a two-dimensional electron gas (2DEG). The device design is very similar to that of the Datta and Das…
Magnetically engineered spintronic sensors and memory
- PhysicsProc. IEEE
- 2003
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of…
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
- PhysicsIBM J. Res. Dev.
- 2006
This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile…
Magnetoresistive random access memory using magnetic tunnel junctions
- Computer Science
- 2003
How the memory operates is described, including significant aspects of reading, writing, and integration of the magnetic material with CMOS, which enabled the recent demonstration of a 1-Mbit memory chip.
Current-driven excitation of magnetic multilayers
- Physics
- 2003
A new mechanism is proposed for exciting the magnetic state of a ferromagnet. Assuming ballistic conditions and using WKB wave functions, we predict that a transfer of vectorial spin accompanies an…
Robust electrical spin injection into a semiconductor heterostructure
- Physics, Materials Science
- 2000
We report efficient electrical injection of spin-polarized carriers from a non-lattice-matched magnetic contact into a semiconductor heterostructure. The semimagnetic semiconductor…
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
- PhysicsNature materials
- 2004
A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.