Spintronics: A Spin-Based Electronics Vision for the Future

  title={Spintronics: A Spin-Based Electronics Vision for the Future},
  author={Stuart A. Wolf and David D. Awschalom and Robert A. Buhrman and J. M. Daughton and Stephan von Moln{\'a}r and Michael L. Roukes and Almadena Yu. Chtchelkanova and Daryl M. Treger},
  pages={1488 - 1495}
This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one… 

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject,


  • M. Flatté
  • Physics
    IEEE Transactions on Electron Devices
  • 2007
Rapid progress in understanding the fundamental physics of nonlinear spin-polarized electronic transport in metals and semiconductors suggests new applications for spintronic devices in fast nonvolatile memory as well as logic devices, with or without magnetic materials or magnetic fields.

Review on spintronics: Principles and device applications

Spintronics and Novel Magnetic Materials for Advanced Spintronics

This chapter contains both the description of advanced spintronic devices for logic and memory applications and the synthesis and characterization of some new magnetic materials that would lead to

Spin injection/detection using an organic-based magnetic semiconductor.

The results demonstrate the spin-polarizing nature of the organic-based magnetic semiconductor, vanadium(TCNE: tetracyanoethylene)(x) (x approximately 2; T(c) approximately 400 K), and its function as a spin injector/detector in hybrid magnetic multilayer devices.

A Review on—Spintronics an Emerging Technology

This review describes an emerging field of electronics devices; electron spin exploitation use for a further degree of freedom incorporation to charge state, with the significant feature like

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A brief history, current status, and future prospectus of the spintronics field for a novice is introduced and a detailed description of various switching mechanisms to write the information in spintronic devices that have the capability to be used for processing-in-memory architecture in the immediate future is described.



Electrical spin injection in a ferromagnetic semiconductor heterostructure

Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of ‘spintronics’, wherein the classical manipulation of electronic spin in

Persistent sourcing of coherent spins for multifunctional semiconductor spintronics

A ‘persistent’ spin-conduction mode in biased semiconductor heterostructures, in which the sourcing of coherent spin transfer lasts at least 1–2 orders of magnitude longer than in unbiased structures, reveals promising opportunities for multifunctional spin electronic devices.

Lateral drag of spin coherence in gallium arsenide

The importance of spin-transport phenomena in condensed-matter physics has increased over the past decade with the advent of metallic giant-magnetoresistive systems and spin-valve transistors. An

Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve

Room-temperature electrical injection and detection of spin currents and observe spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips is reported.

Spatially resolved spin-injection probability for gallium arsenide.

A large spin-polarized current injection from a ferromagnetic metal into a nonferromagnetic semiconductor, at a temperature of 100 Kelvin, is reported, advancing the realization of using both the charge and spin of the electron in future semiconductor devices.

The spin-valve transistor: Fabrication, characterization, and physics (invited)

An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as

Electron Spin and Optical Coherence in Semiconductors

Semiconductors are ubiquitous in device electronics because their charge distributions are easily shaped and controlled to make logic gates. Since gate switching and intercommunication rates limit

Robust electrical spin injection into a semiconductor heterostructure

We report efficient electrical injection of spin-polarized carriers from a non-lattice-matched magnetic contact into a semiconductor heterostructure. The semimagnetic semiconductor

Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor.

A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure, which allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.