Spintronic materials and devices: past, present and future!

@article{Parkin2004SpintronicMA,
  title={Spintronic materials and devices: past, present and future!},
  author={S. S. P. Parkin},
  journal={IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.},
  year={2004},
  pages={903-906}
}
  • S. S. P. Parkin
  • Published 2004 in
    IEDM Technical Digest. IEEE International…
Spintronics utilizes the electron's spin to create useful sensors, memory and logic devices with properties not possible with charge based devices. This paper reviews the past successes, and the current and future prospects of spintronic materials and devices. A magnetic random access memory (MRAM) based on a magnetic tunnel junction memory cell promises a high performance memory with high density, speed and nonvolatility: a recent 16 Mb MRAM demonstration chip is described. Two and three… CONTINUE READING
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S. Parker, S. M. Watts, P. G. Ivanov, et al., Phys. • 2004

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