# Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion

@article{Wang2009SpintronicMT,
title={Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion},
author={Xiaobin Wang and Yiran Chen and Haiwen Xi and Hai Li and Dimitar V. Dimitrov},
journal={IEEE Electron Device Letters},
year={2009},
volume={30},
pages={294-297}
}
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects are quite universal for spin-torque spintronic device at the time scale that explicitly involves the interactions between magnetization dynamics and electronic charge transport. We also proved that the spintronic device can be designed to explore and memorize the continuum state of current and voltage… Expand
299 Citations

#### Figures from this paper

Spintronic memristor devices and application
• Computer Science
• 2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010)
• 2010
This paper explores spintronic memristor potential applications in multibit data storage and logic, novel sensing scheme, power management and information security, and potential application examples are given. Expand
Spintronic Memristor Temperature Sensor
• Physics
• IEEE Electron Device Letters
• 2010
Thermal fluctuation effects on the electric behavior of a spintronic memristor based upon the spin-torque-induced domain-wall motion are explored. Depending upon material, geometry, and electricExpand
Linear and symmetric conductance response of magnetic domain wall type spin-memristor for analog neuromorphic computing
We developed a three-terminal spintronic memristor named spin-memristor for the artificial synapse of neuromorphic devices. Current-induced domain wall (DW) motion type magnetoresistance was used toExpand
Magnetic domain wall motion by spin transfer
Abstract The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simpleExpand
Influence of Geometry on the Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurement
• Materials Science
• 2013
A memristor is characterized by its electrical memory resistance (memristance), which is a function of the historic profile of the applied current (voltage). This unique ability allows reducingExpand
Spin-torque building blocks.
• Materials Science, Medicine
• Nature materials
• 2014
By assembling magnetic nanodevices as building blocks with different functionalities, novel types of computing architecture can be envisaged, focus in particular on recent concepts such as magnonics and spintronic neural networks. Expand
Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing
• Xueying Zhang, +11 authors Weisheng Zhao
• Physics, Medicine
• 2021
Experiments and simulations suggest that nanoscale vertical chiral spin textures can form around clusters of W atoms under the combined effect of opposite Dzyaloshinskii–Moriya interactions and the Ruderman–Kittel–Kasuya–Yosida interaction between the two CoFeB free layers. Expand
Anisotropic and Controllable Gilbert-Bloch Dissipation in Spin Valves.
• Medicine, Physics
• Physical review letters
• 2019
This investigation reveals a mechanism for tuning the free layer damping in situ from negligible to a large value via the orientation of fixed layer magnetization, especially when the magnets are electrically insulating. Expand
Memristive switching of MgO based magnetic tunnel junctions
• Physics
• 2009
Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6%Expand

#### References

SHOWING 1-8 OF 8 REFERENCES
Spin-current interaction with a monodomain magnetic body: A model study
I examined the consequence of a spin-current-induced angular momentum deposition in a monodomain Stoner-Wohlfarth magnetic body. The magnetic dynamics of the particle are modeled using theExpand
Real-space observation of current-driven domain wall motion in submicron magnetic wires.
• Physics, Medicine
• Physical review letters
• 2004
We report direct observation of current-driven magnetic domain wall (DW) displacement by using a well-defined single DW in a microfabricated magnetic wire with submicron width. Magnetic forceExpand
Memristive devices and systems
• Engineering
• Proceedings of the IEEE
• 1976
A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems areExpand
Memristor-The missing circuit element
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-Expand
Analysis of measured transport properties of domain walls in magnetic nanowires and films
Existing data for soft magnetic materials of critical current for domain-wall motion, wall speed driven by a magnetic field, and wall electrical resistance, show that all three observable propertiesExpand
Electronics: The fourth element
• Physics, Medicine
• Nature
• 2008
Almost four decades since its existence was first proposed, a fourth basic circuit element joins the canonical three. The 'memristor' might herald a step-change in the march towards ever moreExpand
The missing memristor found
• Physics
• Nature
• 2009
This corrects the article DOI: 10.1038/nature06932
The fourth element
• Mathematics
• 2008