Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion

@article{Wang2009SpintronicMT,
  title={Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion},
  author={Xiaobin Wang and Yiran Chen and Haiwen Xi and Hai Li and Dimitar V. Dimitrov},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={294-297}
}
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects are quite universal for spin-torque spintronic device at the time scale that explicitly involves the interactions between magnetization dynamics and electronic charge transport. We also proved that the spintronic device can be designed to explore and memorize the continuum state of current and voltage… 

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References

SHOWING 1-8 OF 8 REFERENCES
Spin-current interaction with a monodomain magnetic body: A model study
I examined the consequence of a spin-current-induced angular momentum deposition in a monodomain Stoner-Wohlfarth magnetic body. The magnetic dynamics of the particle are modeled using the
Real-space observation of current-driven domain wall motion in submicron magnetic wires.
We report direct observation of current-driven magnetic domain wall (DW) displacement by using a well-defined single DW in a microfabricated magnetic wire with submicron width. Magnetic force
Memristive devices and systems
A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are
Analysis of measured transport properties of domain walls in magnetic nanowires and films
Existing data for soft magnetic materials of critical current for domain-wall motion, wall speed driven by a magnetic field, and wall electrical resistance, show that all three observable properties
Electronics: The fourth element
Almost four decades since its existence was first proposed, a fourth basic circuit element joins the canonical three. The 'memristor' might herald a step-change in the march towards ever more
Memristor-The missing circuit element
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-
The missing memristor found
This corrects the article DOI: 10.1038/nature06932
The fourth element