Spin transport properties based on spin gapless semiconductor CoFeMnSi

@inproceedings{Han2017SpinTP,
  title={Spin transport properties based on spin gapless semiconductor CoFeMnSi},
  author={Jiangchao Han and Yulin Feng and Kailun Yao and Guoying Gao},
  year={2017}
}
Spin gapless semiconductors have been regarded as the most promising candidates for spin injection materials due to the complete (100%) spin polarization and the conductivity between half-metals and semiconductors. To explore the potential spintronic applications of the quaternary Heusler alloy CoFeMnSi (CFMS), a recently fabricated spin gapless semiconductor with a high Curie temperature of 620 K, we design the GaAs/CFMS heterostructure and the CFMS/GaAs/CFMS magnetic tunnel junction (MTJ). It… CONTINUE READING