Spin-transfer torque magnetic random access memory (STT-MRAM)

@article{Apalkov2013SpintransferTM,
  title={Spin-transfer torque magnetic random access memory (STT-MRAM)},
  author={Dmytro Apalkov and Alexey Khvalkovskiy and Steven Watts and Vladimir Nikitin and Xueti Tang and Daniel Lottis and Kiseok Moon and Xiao Luo and Eugene C Chen and Adrian A Ong and Alexander Driskill-Smith and Mohamad Krounbi},
  journal={JETC},
  year={2013},
  volume={9},
  pages={13:1-13:35}
}
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes. STT-MRAM features fast read and write times, small cell sizes of 6F2 and potentially even smaller, and compatibility with existing DRAM and SRAM architecture with relatively small associated cost added. STT-MRAM is… CONTINUE READING
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