Spin torque control of antiferromagnetic moments in NiO

@article{Moriyama2018SpinTC,
  title={Spin torque control of antiferromagnetic moments in NiO},
  author={Takahiro Moriyama and Kent Oda and Takuo Ohkochi and Motoi Kimata and Teruo Ono},
  journal={Scientific Reports},
  year={2018},
  volume={8}
}
For a long time, there were no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net magnetic moment is effectively zero. For these reasons, research on antiferromagnets has not been progressed as drastically as that on ferromagnets which are the main materials in… Expand
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References

SHOWING 1-10 OF 34 REFERENCES
Electrical switching of an antiferromagnet
TLDR
Electrical writing is combined in solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics. Expand
Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance
TLDR
Pulse current induced Néel vector switching in Mn2Au(001) epitaxial thin films is achieved, which is associated with a large magnetoresistive effect allowing simple read-out. Expand
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
TLDR
A multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II–VI semiconductors, is demonstrated, demonstrating the robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states. Expand
Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO
We report on spin Hall magnetoresistance (SMR) measurements of Pt Hall bars on antiferromagnetic NiO(111) single crystals. An SMR with a sign opposite to conventional SMR is observed over a wideExpand
Magnetic Moment Orientation-Dependent Spin Dissipation in Antiferromagnets.
TLDR
The correlation between the enhanced damping and the strength of the exchange bias suggests that the twisting of the Néel vector induces an additional spin dissipation, which verifies that the Slonczewski-type spin torque is effective even in antiferromagnetic materials. Expand
Room-temperature antiferromagnetic memory resistor.
TLDR
This work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets. Expand
Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
TLDR
A giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature is reported. Expand
Theory of spin Hall magnetoresistance
We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbitExpand
Spin transfer and current-induced switching in antiferromagnets
Recent experiments show that spin-polarized current may influence the state of generally accessory element of spin valves, an antiferromagnetic (AFM) layer, which is used for ``pinning.'' Here weExpand
Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
Electrical readout of the orientation of an antiferromagnet by detecting the N\'eel vector is necessary to exploit this class of materials for applications. Here, the authors study bilayers of thinExpand
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