Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR

@inproceedings{Mizuochi2005SpinMA,
  title={Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR},
  author={Norikazu Mizuochi and Satoshi Yamasaki and Hikaru Takizawa and Norio Morishita and Toshiya Ohshima and Hisayoshi Itoh and Takashi Umeda and Junichi Isoya},
  year={2005}
}
In this paper, we unambiguously re-determine the spin multiplicity of ${T}_{V2a}$ by pulsed electron nucleus double resonance technique. The ${T}_{V2a}$ center is one of the most commonly observed defects in $4H$-SiC, and its origin was identified as one belonging to a class of negatively charged silicon vacancy by means of continuous-wave electron paramagnetic resonance (EPR) and the two-dimensional nutation method of pulsed EPR technique. However, a model with the spin multiplicity of triplet… CONTINUE READING

Figures and Tables from this paper.

References

Publications referenced by this paper.

Vainer and V . A . Il ’ n , Sov

Z. Zolnai, A. Henry, L. Storasta, V. F. Tsvetkov