Spin injection from the Heusler alloy Co/sub 2/MnGe into Al/sub 0.1/Ga/sub 0.9/As/GaAs heterostructures


Co/sub 2/MnGe epitaxial films were grown by molecular beam epitaxy (MBE) on Al/sub 0.1/Ga/sub 0.9/As [001] surfaces prepared in a separate MBE-growth chamber and transferred in ultra high vacuum (<10/sup -10/ torr) to the Heusler alloy MBE growth chamber. In-situ RHEED, ex-situ XRD and TEM demonstrate single crystal epitaxial growth of the films. In-plane… (More)

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