Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures

@article{Tornatzky2021SpinDC,
  title={Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures},
  author={Hans Tornatzky and Clotilde Des Robert and P. Renucci and B. Han and Thomas Blon and Benjamin Lassagne and G{\'e}raldine Ballon and Y. Lu and K. Watanabe and T. Taniguchi and Bernhard Urbaszek and Jo{\~a}o Marcelo J. Lopes and Xavier Marie},
  journal={Applied Physics Letters},
  year={2021}
}
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is… 

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References

SHOWING 1-10 OF 33 REFERENCES
Magneto-optics in transition metal diselenide monolayers
We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample
Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double-Layered Perovskite Manganese Oxide van der Waals Heterostructure.
TLDR
Modulation and control of the excitonic states in a novel van der Waals heterostructure of monolayer MoSe2 on double-layered perovskite Mn oxide is demonstrated, wherein the Mn oxide transforms from a paramagnetic insulator to a ferromagnetic metal.
Electrical spin injection and detection in molybdenum disulfide multilayer channel
TLDR
The evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry is shown and the long spin diffusion length could open a new avenue for spintronic applications using multilayers transition metal dichalcogenides.
Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
TLDR
This demonstration of spin injection and magnetoelectronic control over valley polarization provides a new opportunity for realizing combined spin and valleytronic devices based on spin-valley locking in semiconducting TMDCs.
Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure.
TLDR
The growth of Ta/CoFeB/MgO structures with large perpendicular magnetic anisotropy (PMA) on full-coverage monolayer (ML) molybdenum disulfide (MoS2) is reported and it is found that the insertion of MgO between the ferromagnetic metal and the 2D material can effectively prevent the diffusion of the FM atoms into the2D material.
Control of valley polarization in monolayer MoS2 by optical helicity.
TLDR
It is demonstrated that optical pumping with circularly polarized light can achieve complete dynamic valley polarization in monolayer MoS(2) (refs 11, 12), a two-dimensional non-centrosymmetric crystal with direct energy gaps at two valleys.
Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field.
TLDR
Greater enhanced valley spitting in monolayer WSe2 is shown, utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate, which may enable valleytronic and quantum-computing applications.
Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide.
TLDR
Direct electrical generation and control of valley carriers opens up new dimensions in utilizing both the spin and valley DOFs for next-generation electronics and computing.
Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN
The strong light-matter interaction in transition metal dichalcogenide (TMD) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment
Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid.
TLDR
It is demonstrated that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick.
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