• DOI:10.1109/ISCAS51556.2021.9401524
• Corpus ID: 231934163

Spin Wave Based Full Adder

@article{Mahmoud2021SpinWB,
  title={Spin Wave Based Full Adder},
  author={Abdulqader Nael Mahmoud and Frederic Vanderveken and Florin Ciubotaru and Christoph Adelmann and Sorin Dan Cotofana and Said Hamdioui},
  journal={2021 IEEE International Symposium on Circuits and Systems (ISCAS)},
  year={2021},
  pages={1-5}
}

• A. Mahmoud, Frederic Vanderveken, +3 authors S. Hamdioui
• Published 16 February 2021
• Engineering
• 2021 IEEE International Symposium on Circuits and Systems (ISCAS)

Spin Waves (SWs) propagate through magnetic waveguides and interfere with each other without consuming noticeable energy, which opens the road to new ultra-low energy circuit designs. In this paper we build upon SW features and propose a novel energy efficient Full Adder (FA) design consisting of 1 Majority and 2 XOR gates, which outputs Sum and Carry — out are generated by means of threshold and phase detection, respectively. We validate our proposal by means of MuMax3 micromagnetic simulations and we evaluate and compare its performance with state-of-the-art SW, 22 nm CMOS, Magnetic Tunnel Junction (MTJ), Spin Hall Effect (SHE), Domain Wall Motion (DWM), and Spin-CMOS implementations. Our evaluation indicates that the proposed SW FA consumes 22.5% and 43% less energy than the direct SW gate based and 22 nm CMOS counterparts, respectively. Moreover it exhibits a more than 3 orders of magnitude smaller energy consumption when compared with state-of-the-art MTJ, SHE, DWM, and Spin-CMOS based FAs, and outperforms its contenders in terms of area by requiring at least 22% less chip real-estate.