Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics

@article{Pershin2008SpinMS,
  title={Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics},
  author={Yuriy V. Pershin and Massimiliano Di Ventra},
  journal={Physical Review B},
  year={2008},
  volume={78},
  pages={113309}
}
Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An… Expand

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