# Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics

@article{Pershin2008SpinMS, title={Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics}, author={Yuriy V. Pershin and Massimiliano Di Ventra}, journal={Physical Review B}, year={2008}, volume={78}, pages={113309} }

Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An…

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## References

SHOWING 1-10 OF 26 REFERENCES

The missing memristor found

- PhysicsNature
- 2008

It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.

Memristive devices and systems

- EngineeringProceedings of the IEEE
- 1976

A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are…

Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime

- Physics
- 2008

It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the…

Spin blockade at semiconductor/ferromagnet junctions

- Physics
- 2007

We study theoretically extraction of spin-polarized electrons at nonmagnetic semiconductor/ferromagnet junctions. The outflow of majority-spin electrons from the semiconductor into the ferromagnet…

Memristor-The missing circuit element

- Physics
- 1971

A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-…

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

- Physics
- 2004

We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a nonmagnetic low-dimensional semiconductor structure.…

Imaging Spin Transport in Lateral Ferromagnet/Semiconductor Structures

- PhysicsScience
- 2005

Electrical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devices are imaged, indicating that electron spins are polarized by reflection from the ferromagnetic drain contact.

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions.

- PhysicsPhysical review letters
- 2002

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions, and it is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p- n junction.

Diffusion theory of spin injection through resistive contacts

- Physics
- 2002

Abstract:Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor.…

Spin extraction theory and its relevance to spintronics.

- PhysicsPhysical review letters
- 2007

Inclusion of the interface states yields an explanation of a recent result of spin-imaging measurement which contradicts the current understanding of spin extraction, as illustrated by an application to a spin switch.