# Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics

@article{Pershin2008SpinMS,
title={Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics},
author={Yuriy V. Pershin and Massimiliano Di Ventra},
journal={Physical Review B},
year={2008},
volume={78},
pages={113309}
}
• Published 12 June 2008
• Physics
• Physical Review B
Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An…
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