Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

  title={Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si},
  author={Paul C. Lou and Sandeep Kumar},
  journal={Journal of Magnetism and Magnetic Materials},
  • P. Lou, Sandeep Kumar
  • Published 30 December 2017
  • Materials Science, Physics
  • Journal of Magnetism and Magnetic Materials
Abstract Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport… 
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