Spin Hall and inverse spin galvanic effects in graphene with strong interfacial spin-orbit coupling: A quasi-classical Green's function approach

@article{Monaco2021SpinHA,
  title={Spin Hall and inverse spin galvanic effects in graphene with strong interfacial spin-orbit coupling: A quasi-classical Green's function approach},
  author={C. Monaco and Aires Ferreira and Roberto Raimondi},
  journal={Physical Review Research},
  year={2021}
}
van der Waals heterostructures assembled from atomically thin crystals are ideal model systems to study spin-orbital coupled transport because they exhibit a strong interplay between spin, lattice and valley degrees of freedom that can be manipulated by strain, electric bias and proximity effects. The recently predicted spin-helical regime in graphene on transition metal dichalcogenides, in which spin and pseudospin degrees of freedom are locked together [M. Offidani et al . Phys. Rev. Lett… 

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References

SHOWING 1-10 OF 88 REFERENCES
Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
TLDR
These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.
Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures.
TLDR
This work unambiguously demonstrates experimentally the spin Hall effect in graphene induced by MoS2 proximity and for varying temperatures up to room temperature, paving the way toward the combination of spin information transport and spin-to-charge conversion in two-dimensional materials.
Crystal-field effects in graphene with interface-induced spin-orbit coupling
We consider theoretically the influence of crystalline fields on the electronic structure of graphene placed on a layered material with reduced symmetry and large spin-orbit coupling (SOC). We use a
Microscopic Linear Response Theory of Spin Relaxation and Relativistic Transport Phenomena in Graphene
We present a unified theoretical framework for the study of spin dynamics and relativistic transport phenomena in disordered two-dimensional Dirac systems with pseudospin-spin coupling. The formalism
Electronic spin transport and spin precession in single graphene layers at room temperature
TLDR
The observation of spin transport, as well as Larmor spin precession, over micrometre-scale distances in single graphene layers is reported, indicating that spin coherence extends underneath all of the contacts.
Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/graphene/h-BN heterostructures
Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition-metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found
Anomalous Hall Effect in 2D Dirac Materials.
TLDR
It is found that the entanglement between spin and pseudospin SU(2) degrees of freedom stemming from spin-orbit effects leads to a distinctive gate voltage dependence of the anomalous Hall conductivity approaching the topological gap, which remains robust against impurity scattering and thus is a smoking gun for magnetized 2D Dirac fermions.
Strongly anisotropic spin relaxation in graphene–transition metal dichalcogenide heterostructures at room temperature
A large enhancement in the spin–orbit coupling of graphene has been predicted when interfacing it with semiconducting transition metal dichalcogenides. Signatures of such an enhancement have been
Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures
TLDR
Strongly enhanced room-temperature spin-to-charge interconversion in graphene driven by the proximity of WS 2 and electric-field tunability is demonstrated.
Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene
Spintronics---the all-electrical control of the electron spin for quantum or classical information storage and processing---is one of the most promising applications of the two-dimensional material
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