Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction

@inproceedings{Yatsunenko2003SpinDI,
  title={Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction},
  author={S. Yatsunenko and A. Khachapuridze and Vitalii Yu. Ivanov and Marek Godlewski and Le Van Khoi and Zbigniew Golacki and Grzegorz Karczewski and Ewa M. Goldys and Matthew R. Phillips and Peter J. Klar and Wolfram Heimbrodt},
  year={2003}
}
Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn 2 + emission to spin dependent magnetic interactions between localized spins of Mn 2 + ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures.