Spin-Based MOSFETs for Logic and Memory Applications and Spin Accumulation Signals in CoFe/Tunnel Barrier/SOI Devices

@article{Saito2012SpinBasedMF,
  title={Spin-Based MOSFETs for Logic and Memory Applications and Spin Accumulation Signals in CoFe/Tunnel Barrier/SOI Devices},
  author={Yoshiaki Saito and Mizue Ishikawa and Tomoaki Inokuchi and Hideyuki Sugiyama and Tetsufumi Tanamoto and Kohei Hamaya and Nobuki Tezuka},
  journal={IEEE Transactions on Magnetics},
  year={2012},
  volume={48},
  pages={2739-2745}
}
New innovative ferromagnetic source/drain technologies on Si for next-generation-transistor applications are researched and developed using CoFe/AlO<sub>x</sub><i>n</i><sup>+</sup>-Si and CoFe/MgO <i>n</i><sup>+</sup>-Si junctions. As evidence of the spin accumulation in the <i>n</i><sup>+</sup>-Si conduction channels, nonlocal spin signals and four… CONTINUE READING