Spice Modeling of Silicon Nanowire Field-Effect Transistors for High-Speed Analog Integrated Circuits

@article{HamediHagh2008SpiceMO,
  title={Spice Modeling of Silicon Nanowire Field-Effect Transistors for High-Speed Analog Integrated Circuits},
  author={Sotoudeh Hamedi-Hagh and Ahmet Bindal},
  journal={IEEE Transactions on Nanotechnology},
  year={2008},
  volume={7},
  pages={766-775}
}
Vertical nanowire surrounding gate field-effect transistors (SGFETs) provide full gate control over the channel to eliminate short-channel effects and to achieve ultralow off current. This paper presents the fully depleted BSIMSOI modeling of low-power NMOS and PMOS SGFETs with 10 nm channel length and 2 nm channel radius, extraction of distributed device parasitics, and measuring the capabilities of these transistors for high-speed analog and RF applications. When biased with V ds = 0.5 V and… CONTINUE READING