Specific defect sites creation by doping MgO with lithium and titanium

@inproceedings{Balint2001SpecificDS,
  title={Specific defect sites creation by doping MgO with lithium and titanium},
  author={Ioan Balint and Ken-ichi Aika},
  year={2001}
}
Abstract The effect of temperature and oxygen partial pressure on the electrical conductivity of simple, lithium and titanium doped MgO was investigated in the temperature range 873–1173 K. Pure and lithium doped MgO exhibited always p-type conductivity in the temperature range investigated whereas titanium doped MgO had always n-type conductivity. Defect chemistry equations are used to describe the formation mechanism of specific lattice defects. It is proved that lithium doping increases the… CONTINUE READING