Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- $k$ Trapping Layer

@article{Zhang2007SpatialDO,
  title={Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- \$k\$ Trapping Layer},
  author={Gang Zhang and Xin-Peng Wang and Won Jong Yoo and Ming-Fu Li},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={3317-3324}
}
A time-dependent analytical method based on effective traps in a modified equivalent oxide thickness (EOT) model has been proposed for Flash memory studies, which reflects the effective vertical trap location. The effects of effective trap location and potential on memory properties have also been investigated using Si3N4, HfO2, and ZrO2 devices with the same physical structure as well as with the same equivalent effective trap structure. It was found that effective trap locations varied… CONTINUE READING
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