Sources of n-type conductivity in GaInO3

@article{Wang2015SourcesON,
title={Sources of n-type conductivity in GaInO3},
author={Vei Wang and Wei Xiao and L.-J. Kang and R.-J. Liu and Hiroshi Mizuseki and Yoshiyuki Kawazoe},
journal={Journal of Physics D},
year={2015},
volume={48},
pages={015101}
}
• V. Wang, +3 authors Y. Kawazoe
• Published 2 March 2014
• Materials Science, Physics
• Journal of Physics D
Using hybrid density functional theory, we investigated formation energies and transition energies of possible donor-like defects in GaInO3, with the aim of exploring the sources of the experimentally observed n-type conductivity in this material. We predicted that O vacancies are deep donors; interstitial Ga and In are shallow donors but with rather high formation energies (>2.5 eV). Thus these intrinsic defects cannot cause high levels of n-type conductivity. However, ubiquitous H impurities…
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