Source-pull noise characterization of GaAs pHEMTs

  • Wojciech Wiatr
  • Published 2012 in
    2012 19th International Conference on Microwaves…

Abstract

The paper presents results of the four noise parameter measurement of GaAs pseudomorflc high electron mobility transistors (pHEMTs) in the frequency range 0.8-8 GHz. The parameters were determined using an own complex noise characterization method based on the eigth-term linear noise model. The measurements were performed on wafer with the source-pull… (More)

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