Source/drain elevation process using implantation enhanced selective etching

A technique for formation of elevated source/drain structure has been demonstrated. 100 nm thick epitaxial silicon/polysilicon layer was formed on patterned Si/SiO/sub 2/ structure by chemical vapor deposition (CVD) at 700/spl deg/C. Structural damage was selectively introduced in polysilicon layer by a low dose Argon implantation at 140 keV. Crystal damage… CONTINUE READING