Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment

@article{Kim2009SourceDrainFO,
  title={Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by \$\hbox\{NH\}_\{3\}\$ Plasma Treatment},
  author={Sangwook Kim and Jaechul Park and Changjung Kim and Ihun Song and Sunil Kim and SungHo Park and Huaxiang Yin and Hyung-Ik Lee and Eunha Lee and Youngsoo Park},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={374-376}
}
The source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple NH3 plasma treatment instead of complicated processes, such as ion implantation and activation. When the source/drain region of active layer was exposed to NH3 gas plasma, the series resistance of the transistor decreased considerably… CONTINUE READING