Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's

Abstract

Techniques which allow us to determine the series source, drain, and gate resistances and the electron saturation velocity of ion-implanted GaAs FET's are described. These techniques are based on the "end" resistance measurements. The theory of this method is developed and used for a new interpretation of the "end" resistance measurements. The values of the… (More)

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