Some experimental and numerical investigations into the Two Roots Model on GaAs based diodes: giant hysteresis observed

@article{Khan1999SomeEA,
  title={Some experimental and numerical investigations into the Two Roots Model on GaAs based diodes: giant hysteresis observed},
  author={W. I. Khan and M. Ishaque and Trautmann Christina},
  journal={CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)},
  year={1999},
  volume={1},
  pages={265-267 vol.1}
}
Some efforts have been made on GaAs based diodes for experimental and numerical investigations into the Two Roots Model. The dependence of the width of the hysteresis on the thermal annealing temperature shows effects of impurities. Finally the numerical simulation lead to the manifestation of the phase-diagram involved in the Two Roots Model. 

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