Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation.

Abstract

Three dimension atom probe analysis of semiconductor materials requires the ability to bring high electric field at the specimen apex to remove atoms. It is shown that, if voltage pulses are used to evaporate doped silicon, the resistivity of the material has to be lower than about 10(2) Omega cm. To overcome this problem, voltage pulses have been replaced… (More)

Topics

  • Presentations referencing similar topics