Corpus ID: 119293803

Some Useful Relations for Analyzing Nanoscale MOSFETs Operating in the Linear Region

@article{Lundstrom2016SomeUR,
  title={Some Useful Relations for Analyzing Nanoscale MOSFETs Operating in the Linear Region},
  author={M. Lundstrom and Xingshu Sun},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2016}
}
Several equations used to model and characterize the linear region IV characteristics of nanoscale field-effect transistors are derived. The meaning of carrier mobility at the nanoscale is discussed by defining two related quantities, the apparent mobility and the ballistic mobility. The validity of Matthiessen's Rule for relating the apparent ability to the ballistic and diffusive mobilities is examined. Other questions that arise in the analysis and characterization of nanoscale field-effect… Expand
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