Solution-processed silicon films and transistors

@article{Shimoda2006SolutionprocessedSF,
  title={Solution-processed silicon films and transistors},
  author={Tatsuya Shimoda and Yasuo Matsuki and Masahiro Furusawa and Takashi Aoki and Ichio Yudasaka and Hideki Tanaka and Haruo Iwasawa and Daohai Wang and Masami Miyasaka and Yasumasa Takeuchi},
  journal={Nature},
  year={2006},
  volume={440},
  pages={783-786}
}
The use of solution processes—as opposed to conventional vacuum processes and vapour-phase deposition—for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on… Expand
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TLDR
It is proved that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. Expand
Semiconductors: Spray-on silicon
TLDR
Shimoda et al. successfully fabricated polycrystalline silicon transistors by spin-coating a novel liquid precursor, and this solution-based approach can also be adapted for ‘ink-jet’ printing of transistors. Expand
29.1: Solution‐Processed Poly‐Si TFTs at Paper Compatible Temperatures
Printed TFTs made from organic and metal-oxide semiconductors have much inferior electrical performance and reliability than their silicon counterparts. Cyclopentasilane is a liquid compound that hasExpand
Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing.
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TLDR
A comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized. Expand
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