Solution-processed silicon films and transistors

  title={Solution-processed silicon films and transistors},
  author={Tatsuya Shimoda and Yasuo Matsuki and Masahiro Furusawa and Takashi Aoki and Ichio Yudasaka and Hideki Tanaka and Haruo Iwasawa and Daohai Wang and Masami Miyasaka and Yasumasa Takeuchi},
The use of solution processes—as opposed to conventional vacuum processes and vapour-phase deposition—for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on… 
Solution-based polycrystalline silicon transistors produced on a paper substrate
Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used
Polycrystalline silicon TFTs on a paper substrate using solution-processed silicon
Solution-processing has gained widespread attention over the past years due to their potential low-cost advantage in terms of fabrication of electronics as well as application to flexible
Solution-processed polycrystalline silicon on paper
Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures,
Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes
It is proved that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs.
Semiconductors: Spray-on silicon
Shimoda et al. successfully fabricated polycrystalline silicon transistors by spin-coating a novel liquid precursor, and this solution-based approach can also be adapted for ‘ink-jet’ printing of transistors.
Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing.
The development of large-area, low-cost electronics for flat-panel displays, sensor arrays, and flexible circuitry depends heavily on high-throughput fabrication processes and a choice of materials
Fully printed transistors employing silicon nanoparticles
A new device, which utilises a previously unknown two-way mode of current switching, has been developed. This is the current switching transistor, a three-terminal electronic device which exhibits a
Liquid silicon and its application in electronics
We have been attempting to use liquid silicon (Si) in a solution process to develop semiconductor materials. We chose cyclopentasilane (CPS) as the raw material, which can be converted to
High performance printed oxide field-effect transistors processed using photonic curing
Interestingly, here it is found that the chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink.


High-mobility ultrathin semiconducting films prepared by spin coating
The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).
All-polymer thin film transistors fabricated by high-resolution ink-jet printing
All-polymer thin film transistors (TFTs) are fabricated by ink-jet printing for the first time. Source/drain electrodes are printed using a conducting polymer (PEDOT) solution on substrates with
Flexible active-matrix displays and shift registers based on solution-processed organic transistors
Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
High-resolution inkjet printing of all-polymer transistor circuits.
It is shown that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers, and high mobilities were achieved.
All-Inorganic Field Effect Transistors Fabricated by Printing.
A solution of cadmium selenide nanocrystals was used to print inorganic thin-film transistors with field effect mobilities up to 1 square centimeter per volt second, which suggests a route to inexpensive, all-printed, high-quality inorganic logic on plastic substrates.
Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films
This method results in a power conversion efficiency 50 per cent higher than the best values reported for comparable bilayer devices, suggesting that this strained annealing process could allow for the formation of low-cost and high-efficiency thin film organic solar cells based on vacuum-deposited small-molecular-weight organic materials.
XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
Mo-gate n-channel poly-Si thin-film transistors (TFT's) have been fabricated for the first time at a low processing temperature of 260°C. A 500-1000-A-thick a-Si:H was successfully crystallized by
27.2: Poly‐Si Thin‐Film Transistors Using Polysilazane‐Based Spin‐On Glass for All Dielectric Layers
Polycrystalline silicon thin‐film transistors (poly‐Si TFTs) with all layers of dielectric made from polysilazane‐based spin‐on glass (PS‐SOG) have been developed for the first time. The maximum
High-performance, solution-processed organic thin film transistors from a novel pentacene precursor.
Organic thin film transistors fabricated by spin-coating this adduct, followed by thermal conversion to pentacene, exhibit the highest mobility reported to date for a solution-processed organic semiconductor.
Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method
This article reports the fabrication of thin films of In2O3 from an aqueous sol and an organic solution. The stability of the aqueous sol with respect to the concentration of indium and pH are