Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity

Abstract

Indium-zinc-oxide (IZO)-based electric double layer (EDL) transistors gated by solution-processed chitosan electrolyte films are fabricated on glass substrates and used for mimicking synaptic plasticity. The conductance of the self-assembled IZO channel tuned by the proton electrostatic modulation and electrochemical doping is regarded as the synaptic… (More)

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@article{Zhou2014SolutionProcessedCI, title={Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity}, author={Jumei Zhou and Yanghui Liu and Yi Shi and Qing Wan}, journal={IEEE Electron Device Letters}, year={2014}, volume={35}, pages={280-282} }