Solid state. III. Discrete devices
View on IEEE
Abstract & Figures
For pt.II see ibid., vol.18, no.1, p.62-3 (1981). Discusses advances in extending the performance of power MOS field effect transistors which will extend their usefulness, particularly in relation to integration with transducers.
Sorry, we couldn't extract any citations for this paper.
Sorry, we couldn't extract any references for this paper.
Loading similar papers…
Presentations referencing similar topics