Solid-phase epitaxial regrowth of amorphous layers in Si„100... created by low-energy, high-fluence phosphorus implantation


Medium energy ion scattering has been used to study the kinetics of solid-phase epitaxial regrowth SPEG of ultrathin amorphous layers formed by room-temperature implantation of 5 keV energy phosphorus ions into Si 100 . The implants create P distributions with peak concentrations up to 7 1021 cm−3. SPEG has been driven by rapid thermal annealing, 475 °C TA… (More)


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