Soi Vs Cmos for Analog Circuit

Abstract

This paper reviews the basic circuit issues of silicon-on-insulator (SOI) technology for metal-oxide-semiconductor (CMOS) circuits. The superior features of SOI in low power, high speed, high device density and the effect of floating body particularly in partial depletion (PD) SOI device are addressed. Analog and RF circuits are considered and their performances are compared with those reported in bulk CMOS.

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Cite this paper

@inproceedings{Ma2001SoiVC, title={Soi Vs Cmos for Analog Circuit}, author={Vivian Ma}, year={2001} }