Snapback by Hot Filament


A simulation procedure using the conventional thermal-electric finite element method for the phase change memory has been developed. By introducing a defect on the amorphous chalcogenide of a reset phase change memory, the snapback by hot filament due to thermal runaway has been investigated by the numerical simulations with three-dimensional model. 

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@article{Yeh2006SnapbackBH, title={Snapback by Hot Filament}, author={Jyi-Tyan Yeh and F. Chen and Der-Sheng Chao and Wen-Han Wang and Yi-Chan Chen and Chain-Ming Lee and Ming-Jinn Tsai and Ming-Jer Kao}, journal={2006 7th Annual Non-Volatile Memory Technology Symposium}, year={2006}, pages={84-88} }