Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.

@article{Kushwaha2016SndopedBB,
  title={Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.},
  author={Satya Kushwaha and I Pletikosi{\'c} and Tian Shui Liang and Andr{\'a}s Gyenis and Saul Henri Lapidus and Yao Gang Tian and H. Vicky Zhao and Kenneth S Burch and Jingjing Lin and Wudi Wang and Huiwen Ji and A V Fedorov and Ali Yazdani and Nai Phuan Ong and Tonica Valla and Robert Joseph Cava},
  journal={Nature communications},
  year={2016},
  volume={7},
  pages={
          11456
        }
}
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single… CONTINUE READING
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