Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Abstract

Three types of SiN<sub><italic>x</italic></sub> passivation for microwave AlGaN/GaN HEMTs were deposited with low-pressure chemical vapor deposition under different deposition conditions, resulting in different silicon contents. The performance of the HEMTs is comprehensively investigated and compared. Both small- and large-signal analyses, such as… (More)

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