Small Signal Response of Inversion Layers in High Mobility In 0

@inproceedings{Ali2009SmallSR,
  title={Small Signal Response of Inversion Layers in High Mobility In 0},
  author={Asad Ali and Himanshu Madan and Sergei Koveshnikov and Suman Datta},
  year={2009}
}
Ultra-high mobility compound semiconductor-based MOSFETs and quantum-well FETs could enable the next generation of logic transistors operating at low supply voltages since these materials exhibit excellent electron transport properties. While the long channel In0.53Ga0.47As MOSFET characteristics exhibit promising characteristics with unpinned Fermi level at the InGaAs-dielectric interface, the high field channel mobility as well as sub-threshold characteristics needs further improvement. There… CONTINUE READING
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