Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances

@article{Pasadas2017SmallSignalMF,
  title={Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances},
  author={Francisco Pasadas and Wei Wei and Emiliano Pallecchi and Henri Happy and David Jim{\'e}nez},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={4715-4723}
}
A small-signal equivalent circuit of 2D-material based FETs is presented. Charge conservation and nonreciprocal capacitances have been assumed, so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic… 
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Device-to-circuit modeling approach to Metal – Insulator – 2D material FETs targeting the design of linear RF applications
  • A. Toral-Lopez, F. Pasadas, A. Godoy
  • Physics, Engineering
    2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
  • 2019
We present a physics-based device-to-circuit modeling approach to metal – insulator – 2D material based field-effect transistors (2DFETs). Starting from numerical simulations based on the…
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