Slow relaxation of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field.

Abstract

We observed a slow relaxation of the magnetoresistance in response to an applied magnetic field in selectively doped p-GaAs-AlGaAs structures with a partially filled upper Hubbard band. We have paid special attention to excluding the effects related to temperature fluctuations. Although these effects are important, we have found that the general features of… (More)
DOI: 10.1088/0953-8984/22/40/405301

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